| 摘要 |
PURPOSE: A thin film transistor substrate and a method for manufacturing the same are to effectively discharge a static electricity and inspect a thin film transistor array without removing a discharge line from gate line and data line. CONSTITUTION: A gate line(200) including a gate pad(230) and an extended portion(240) of the gate line, and the first to third data line inspection signal line(260,270,280) are formed on an insulating substrate. A gate insulating layer is formed on the resultant substrate. A semiconductor pattern and a resistive contact layer pattern are formed on the gate insulating layer. A data line(600) including a source/drain electrode, a data pad(630), an extended portion(640) of the data line, a horizontal and vertical interconnection line for discharge(650,690) and the first and second gate line inspection signal line(660) are formed on the resistive contact layer pattern and is connected to the gate line. The first to third data line inspection signal line is connected to the data line. A part of the extended portion of the data line on the isolation gate electrode is removed between the horizontal interconnection lines for discharge to expose the semiconductor pattern.
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