| 摘要 |
PROBLEM TO BE SOLVED: To provide manufacturing procedures in which an MEMS device, to be described in detail, a band-pass filter resonator is constructed by a method which is compatible with existing treatment of an integrated circuit. SOLUTION: A final device is constructed of single-crystal silicon, and a mechanical problem which is related to the use of polycrystalline silicon or amorphous silicon is excluded. A final MEMS device is situated in a part lower than the surface of silicon, it does not comprise a protruding structure, and an integrated circuit can be treated further. The MEMS device has a size which approximates that of an SRAM cell, and it can be built easily into an existing integrated-circuit chip. The natural frequency of the device can be changed in post-treatment, or it can be controlled electronically by using a voltage and a current, which are compatible with the integrated circuit.
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