METHOD FOR MANUFACTURING ELECTRICAL INTERCONNECTION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an electrical interconnection of a semiconductor device is provided to prevent a malfunction such as resistor-capacitor delay of the semiconductor device, by making an interlayer dielectric maintain a low dielectric constant k. CONSTITUTION: An interlayer dielectric(400) is formed on a semiconductor substrate(100). A contact hole(450) is formed on the interlayer dielectric. A plug(501) for preventing corrosion is composed of an organic material filling the contact hole. A photoresist pattern(700) exposing the interlayer dielectric portion adjacent to the plug for preventing corrosion and exposing the plug for preventing corrosion, is formed. The interlayer dielectric portion exposed by the photoresist pattern and the plug for preventing corrosion is etched to form a groove(470) in contact with the contact hole. The plug for preventing corrosion and the photoresist pattern are eliminated. A conductive line filling the groove and the contact hole is formed.