发明名称 METHOD FOR FORMATION OF WIRING PATTERN, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME, CIRCUIT BOARD, AND ELECTRONIC EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for forming wiring pattern by which rewiring can be made without implementing a full-surface thin film forming step (sputtering) or etching step, a semiconductor device and a method for manufacturing it, a circuit board, and electronic equipment. SOLUTION: A method for forming wiring pattern includes a first step of providing a catalyst 60 in an exposed state in the forming area of a wiring pattern and a second step of forming the wiring pattern with a conductive material 30 by performing electroless plating for depositing the material 30 on the exposed area of the catalyst 60.
申请公布号 JP2001093907(A) 申请公布日期 2001.04.06
申请号 JP19990270515 申请日期 1999.09.24
申请人 SEIKO EPSON CORP 发明人 YODA TAKESHI;MATSUSHIMA FUMIAKI
分类号 H01L21/3205;H01L21/288;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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