发明名称 |
METHOD FOR FORMATION OF WIRING PATTERN, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME, CIRCUIT BOARD, AND ELECTRONIC EQUIPMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming wiring pattern by which rewiring can be made without implementing a full-surface thin film forming step (sputtering) or etching step, a semiconductor device and a method for manufacturing it, a circuit board, and electronic equipment. SOLUTION: A method for forming wiring pattern includes a first step of providing a catalyst 60 in an exposed state in the forming area of a wiring pattern and a second step of forming the wiring pattern with a conductive material 30 by performing electroless plating for depositing the material 30 on the exposed area of the catalyst 60.
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申请公布号 |
JP2001093907(A) |
申请公布日期 |
2001.04.06 |
申请号 |
JP19990270515 |
申请日期 |
1999.09.24 |
申请人 |
SEIKO EPSON CORP |
发明人 |
YODA TAKESHI;MATSUSHIMA FUMIAKI |
分类号 |
H01L21/3205;H01L21/288;(IPC1-7):H01L21/320 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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