ISOLATING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: An isolating method of a semiconductor device is provided to improve an isolating characteristic by burying a trench with p-type polysilicon to form a channel stop layer between active regions. CONSTITUTION: A predetermined portion of a semiconductor substrate in which an isolating region and an active region are defined is eliminated to form a trench. The trench is buried while the isolating layer of which a part is extended to the surface of the substrate is formed with polysilicon doped with the first conductive material.