METHOD AND DEVICE FOR REDUCING COPPER OXIDATION AND CONTAMINATION IN SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method and device for reducing oxidation of the interface of a semiconductor device. SOLUTION: An oxidized interface 110 in a semiconductor device having a first layer 104 and a second layer 108 is reduced by introducing a hydrogen- containing plasma to the first layer 108 having the oxidized interface 110, and the material used for forming the second layer 108 is deposited on the first layer 104 in an oxidation preventing environment by also introducing the hydrogen-containing plasma to the material. Even when a single or a plurality of conductive devices 106 is contained in the first layer 104 by forming the layer 104 as an insulating layer, the oxidation of the interfaces between the layer 104 and devices 106 is removed by continuously performing plasma treatment on the interfaces, and then, the second layer 108 is deposited on the layer 104.