METHOD FOR FORMING PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a method for forming patterns by which the formation of an organic silicon mask retaining a masking property to a film to be processed without being deteriorated is made possible. SOLUTION: This method includes a stage for forming resist patterns on a substrate to be processed, a stage for embedding an organic silicon compound having the bond of silicon and silicon in the main chain into the apertures of the resist patterns, a stage for heating the resist patterns above a temperature at which the dissolution suppressing group or dissolution suppressing agent in the resist decomposes and a stage for forming the organic silicon film patterns by immersing the resist patterns into a solution which dissolves the resist and removing the resist patterns.