METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce fringe capacitance and to shorten resistor-capacitor(RC) delay time, by forming a capping layer on copper interconnections while preventing the capping layer on an interlayer dielectric between the copper interconnections. CONSTITUTION: The first conductor(11) is formed on a semiconductor substrate. An interlayer dielectric(13) is formed on the semiconductor substrate, exposing a partial region of the first conductor and having groove parts separated from each other by a predetermined interval where the groove parts have a damascene structure. After a barrier layer(17) is formed on the interlayer dielectric inside the exposed first conductor and the grooves to prevent a copper diffusion to the first conductor, copper interconnections(21) filled in the grooves are formed. A capping layer(27) is selectively formed on the copper interconnection to prevent a copper diffusion from an upper surface of the copper interconnections.