发明名称 APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a device and method for manufacturing a semiconductor for tracing the aging changes of electrical resistance or current amounts, and for properly controlling oxidation reaction by predicting the progress level of the oxidation reaction from the electrical resistance or the current amounts. SOLUTION: A prescribed voltage is impressed to electrode probes 14 and 16 for measurement, brought into contact with a sample 13 for monitor and arranged near a semiconductor precursor 12 in an oxidation furnace 10, and current amounts I are detected by an ammeter 15 connected with the electrode 14 for measurement, and an electrical resistance R is calculated from the current amounts I by a computer 18, and the electrical resistance R is displayed on a monitor 20, and when the electrical resistance R reaches a prescribed value, oxidation reaction is controlled, and one part of the region capable of oxidation of the semiconductor precursor 12 is selectively oxidized, and a semiconductor can be manufactured.
申请公布号 JP2001093896(A) 申请公布日期 2001.04.06
申请号 JP19990271867 申请日期 1999.09.27
申请人 FUJI XEROX CO LTD 发明人 NAKAYAMA HIDEO;OTOMA HIROKI
分类号 H01L21/31;H01L21/66;H01S5/183;(IPC1-7):H01L21/31 主分类号 H01L21/31
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