| 发明名称 |
APPARATUS FOR FORMING THIN FILM AND METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE USING THE SAME |
| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to decrease a leakage current by reducing impurities remaining in a storage electrode or high dielectric layer. CONSTITUTION: A dielectric layer is formed on a storage electrode. The dielectric layer is annealed in an atmosphere of oxygen radical or plasma, and is after-treated. A plate electrode is formed on the after-treated dielectric layer. The deposition of the dielectric layer and the after-treatment are peformed in the same chamber. The oxygen radical atmosphere is an acid atmosphere containing ozone.
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| 申请公布号 |
KR20010027867(A) |
申请公布日期 |
2001.04.06 |
| 申请号 |
KR19990039839 |
申请日期 |
1999.09.16 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG, DU SEOP;KANG, CHANG SEOK;PARK, HONG BAE;PARK, YEONG UK;YOO, CHA YEONG |
| 分类号 |
C23C16/40;C23C16/56;H01L21/02;H01L21/31;H01L21/316;H01L21/321;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
C23C16/40 |
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