| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER USING ANNEALING PROCESS AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: A method for manufacturing a semiconductor wafer by using an annealing process is provided to improve surface morphology in depositing a subsequent thin film, by improving surface roughness caused by defects existing on the semiconductor wafer or surface of a semiconductor device. CONSTITUTION: A semiconductor wafer is configured from a semiconductor ingot. The surface of the semiconductor wafer is polished. The polished semiconductor wafer is annealed in a hydrogen gas atmosphere including semiconductor material source gas at a temperature not higher than 950 deg.C and at a pressure not higher than 10¬-2 Torr.
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| 申请公布号 |
KR20010028418(A) |
申请公布日期 |
2001.04.06 |
| 申请号 |
KR19990040652 |
申请日期 |
1999.09.21 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, HAN SIN;PARK, GYEONG WON;PARK, JEONG U;PARK, TAE SEO;SONG, WON SANG |
| 分类号 |
H01L21/324;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/324 |
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