发明名称 ION IMPLANTING PROCESS HAVING DIFFERENTIAL STEPS
摘要 PURPOSE: An ion implanting process having differential steps is provided to reduce steps required for the process and thereby to improve productivity. CONSTITUTION: In the ion implanting process, a difference in conditions of ion implantation is made between a cell region and a periphery region. The first ion implanting step is performed under the first condition of ion implantation suitable for one of both the cell region and the periphery region. After that, while masking the region implanted under the suitable condition, the second ion implanting step is performed under the second condition compensating the other region. Preferably, the preceding step and the following step are performed at ion implanting angles of seven degrees and zero degrees, respectively.
申请公布号 KR20010027157(A) 申请公布日期 2001.04.06
申请号 KR19990038752 申请日期 1999.09.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BYUN, HYEON OK
分类号 H01L27/08;H01L21/265;H01L21/266;H01L21/425;H01L21/8238;H01L27/10;(IPC1-7):H01L21/265 主分类号 H01L27/08
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