| 摘要 |
<p>The invention provides a quality silicon wafer unlikely to affect device performance while preventing boron contamination. Specifically, the amount of boron deposition on the surface of a silicon wafer is less than 1 x 1010 atoms/cm2. The ambient boron concentration is maintained below 15 ng/m3 to manufacture a wafer with such little amount of boron deposition on the surface. A filter for a clean room is composed of a boron-free filter and a boron-adsorbing filter to reduce the ambient boron concentration.</p> |
