| 摘要 |
<p>A tungsten target for sputtering having a relative density of 99 % or more and an average crystal grain diameter of 100 νm or less. The tungsten target can be prepared by a method comprising providing a tungsten powder having a relative surface area of 0.4 m2/g or more, hot pressing the powder at a temperature of 1600°C or higher to produce a sintered compact and then subjecting the sintered compact, without encapsulation, to a HIP treatment at a temperature of 1700°C or higher. The tungsten target has a higher density and a smaller crystal grain size compared to that prepared by a conventional pressure sintering method and can be prepared with stability and at a low cost and can be used for markedly decreasing the occurrence of the particle defect on the film formed by the use of a tungsten target.</p> |
