METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to form a uniform dielectric layer on a storage electrode by performing an annealing process in an oxygen atmosphere in manufacturing the capacitor of a metal-insulator-metal(MIM) structure. CONSTITUTION: A lower electrode(100) is formed on a semiconductor substrate by using a conductive layer containing an aluminum element, a nitrogen element and another metal element other than the aluminum element. The lower electrode is annealed in an oxygen atmosphere to form an aluminum oxide layer(210) on the lower electrode by firstly using oxidation of the aluminum element contained in the conductive layer. A plate electrode is formed on the dielectric layer.