| 摘要 |
PROBLEM TO BE SOLVED: To improve the surface state of an Al film at forming of an Al film at an alignment mark part to be operated simultaneously as the Al embedding of a connection hole by a high temperature A1 sputter method, and to improve the alignment precision of the patterning of an Al wiring pattern. SOLUTION: A connection hole is formed in an interlayer insulating film 4 at a circuit part, and an opening is formed in the interlayer insulating film 4 at an alignment mark part. Then, barrier metal layers 6 are formed at both the circuit part and the alignment mark part, and the barrier metal layer at the alignment mark part is removed by patterning, and Al layers 8 are formed on the barrier metal layer 6 at the circuit part and on the inter-layer insulating film 4, at the alignment mark part by a high temperature Al sputter method. Then, an upper layer wiring formed by patterning the barrier metal layer 6, and the Al layer 8 at the circuit part is connected through the Al layer 8 which embeds the connection hole via the barrier metal layer 6 with a lower layer wiring 2 by alignment at the alignment mark part. |
