| 发明名称 |
REDUNDANCY MEMORY CIRCUIT WITH ROM STORAGE CELLS |
| 摘要 |
<p>Addressable first units having ROM memory cells, for example word or bit lines, can be replaced by redundant second units having RAM memory cells. This has the advantage that the RAM memory cells can be realized with a smaller area than alternative PROM memory cells. The invention can be applied particularly advantageously to DROM memories.</p> |
| 申请公布号 |
EP0902924(B1) |
申请公布日期 |
2001.04.04 |
| 申请号 |
EP19970930292 |
申请日期 |
1997.05.21 |
| 申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BERNAUER, KLAUS;BREILMANN, JOCHEN;BROMBA, MANFRED;MC CONNELL, RODERICK;PLAETTNER, ECKEHARD;SCHOENEMANN, KONRAD |
| 分类号 |
G11C11/00;G11C29/00;G11C29/24;(IPC1-7):G06F11/20 |
主分类号 |
G11C11/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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