| 摘要 |
<p>A method of fabricating a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) device with an elevated source 29 and drain 30. A MOSFET region is defined on the surface of a silicon substrate 18, and a central area of that region removed by etching down to a predefined depth. Raised areas 29,30 on either side of the resulting recess 25 are doped to form the drain and a source, such that an active channel of the MOSFET device is provided wholly beneath the base of the recess 25. <IMAGE></p> |
