发明名称 Resist composition and process of forming a patterned resist layer on a substrate
摘要 A radiation sensitive resist composition exhibiting high resolution and enhanced etch resistance comprising a silicon containing polymeric additive, a non-silicon containing base polymer, a photoacid generator and a base is provided. A method of forming a patterned resist film is also provided. A resist film having an upper surface region enriched with silicon is also disclosed.
申请公布号 US6210856(B1) 申请公布日期 2001.04.03
申请号 US19990238823 申请日期 1999.01.27
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 LIN QINGHUANG;HUGHES TIMOTHY M.;JORDHAMO GEORGE M.;KATNANI AHMAD D.;MOREAU WAYNE M.;PATEL NIRANJAN
分类号 H01L21/027;G03F7/004;G03F7/039;G03F7/075;(IPC1-7):G03C1/725 主分类号 H01L21/027
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