| 摘要 |
PURPOSE: A fabrication method of an SRAM is provided to reduce a leakage current by forming a buried contact, which is covered by a polysilicon sufficiently to prevent an etching of a substrate. CONSTITUTION: An active region is defined on a substrate of a first conductive type by forming selectively a field oxide layer. After forming a gate insulating layer(3) on the active layer, a contact hole is formed by removing an one side edge portion of the active region of the gate insulating layer. An N+ junction(13) having a wider width than a width of the contact hole is formed by forming a mask to expose a region having the wider width than the width of the contact hole and by implanting a second impurity ion into an exposed region. After removing the mask and forming a conductor(6) on an entire surface, a buried contact and the conductor for a gate are patterned on a top of the N+ junction(13) and a top of the gate insulating layer(3). After forming a sidewall insulating layer(9) on the patterned conductor, a source/drain junction(14) is formed by implanting an N-type impurity ion on the exposed region using the patterned conductor(6) and the sidewall(9) as the mask.
|
