发明名称 Semiconductor device
摘要 A semiconductor device is provided which is highly reliable and operable at fast speed and low noises. In this semiconductor device, there are provided a power wiring section 1003a, a ground wiring section 1003b and a signal wiring section 1003c are formed on one level. The power wiring section or the ground wiring section is formed adjacently on both sides of at least one part of the signal wiring section.
申请公布号 US6211576(B1) 申请公布日期 2001.04.03
申请号 US19990397853 申请日期 1999.09.17
申请人 HITACHI, LTD. 发明人 SHIMIZU HIROYA;NISHIMURA ASAO;MIYAMOTO TOSIHO;TANAKA HIDEKI;MIURA HIDEO
分类号 H01L21/3205;H01L21/60;H01L21/822;H01L23/50;H01L23/52;H01L23/552;H01L23/64;H01L23/66;H01L27/04;H01L27/14;(IPC1-7):H01L23/48;H01L29/52;H01L29/40 主分类号 H01L21/3205
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