| 摘要 |
(i) forming a bit line(204) and a word line(208) by conventional DRAM mfg. process, opening an active region(203) for a charge storage electrode contact of capacitor, and depositing a polysilicon(209) for charge storage electrode; (ii) forming a first photosensitive film pattern(213a), and etching the polysilicon(209) of predetermined thickness using the first photosensitive film pattern(213a) as etching barrier; (iii) removing the first photosensitive film pattern(213a), forming a second photosensitive film pattern(213b) BT etching the remaining polysilicon(209) using the second photosensitive film pattern(213b) as etching barrier; and (iv) removing the second photosensitive film pattern(213b), depositing a dielectric film(210) on the polysilicon(209), and forming a plate electrode(211) on entire surface of resulting structure.
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