| 摘要 |
PROBLEM TO BE SOLVED: To uniformize the etching rate distribution in the plane of a wafer by setting the distance between the supply of high frequencies and the wafer to be subject to processing, such as etching, to an integral multiples of λ/2, where λ is the wavelength of high frequency used, in a plasma treatment apparatus. SOLUTION: In a plasma treatment apparatus, the distance between the lower face of a quartz plate 3 to a wafer 10 to be subjected to a processing such as etching is set to an integral multiples of λ/2, where λ is the wavelength of microwave supplied from a magnetron 1. Thereby, the in-plane etching rate distribution of the wafer 10 to be subjected to a processing such as etching can be uniformized. |
