| 摘要 |
PROBLEM TO BE SOLVED: To reduce occurrence of foreign substance by cleaning, by the number of sheets 1-N, before/after a substrate is processed in a processing chamber, after the processing chamber is decompressed from the atmosphere, before the processing chamber is restored to the atmosphere, and in the process where a plurality of substrates are processed in the processing chamber. SOLUTION: A substrate which is to be processed is moved from a separate carry-in chamber to an electrode 3 of a processing chamber 1 without affecting the vacuum condition of the processing chamber 1. A high frequency power source 4 connected to the electrode 3 polarizes the electrode to negative, while taking in the ion generated in the plasma to an electrode 4 vertically, for the substrate provided to the electrode 4 to be etched. Then a next wafer is etched in the processing chamber 1 so that the product generated by etching sticks to the inside surface of the process chamber 1. The sticking product is cleaned by the number of sheets 1-N, before the substrate is processed in the processing chamber 1, after the processing chamber 1 is decompressed from the atmosphere, and before the processing chamber 1 is restored to the atmosphere, respectively. |
