| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for preventing the occurrence of damages to functioning film formed at a site which is likely to be affected by thermal stresses, and for reducing to the utmost the increase of manufacturing man-hours in the diaphragm structure of a semiconductor microsensor. SOLUTION: This method is for manufacturing a semiconductor sensor, having not less than two kinds of thin-film layers, that is, at least an insulating film and a functioning film on a semiconductor substrate. This method comprises a process, for forming an insulating film containing constituting components A, so that at least one part of the semiconductor substrate can be covered and a process for forming the functioning film containing constituting components B, so that at least one part of the insulating film can be covered, and a process carrying out heat treatment at a temperature which is 500 deg.C or higher and lower than 700 deg.C. The constituting components A are made of at least one kind from among Si and Al, and the constituting components B are selected from at least one kind among Sn, In, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Y, Zr, Nb, W, Mo, Ru, Cd, Sb, Hf, Ta, Re, Os, Ag, Pd, Ir, Tl, Pb, Bi, Li, An, K, Pb, Cs, Mg, Ca, Sr, Ba, V, and E or the like.
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