| 摘要 |
PROBLEM TO BE SOLVED: To entirely remove an etching product sticking to a metal wiring and a metal residue such as Cu by continuously processing with two kinds of remover liquids whose chemical component is different. SOLUTION: After forming a metal wiring of micro pattern on an Si substrate by dry-etching, the Si substrate surface with the metal wiring formed is processed in a first remover liquid to remove a dry etching product 31. A metal residue 32 sticks to the metal wiring during the process. As the first remover liquid, a liquid containing ammonium fluoride, about 1 wt.% preferred, is used as an example. Then a second remover liquid is used for process to remove the metal residue 32. By the process, the metal residue 32 such as Cu sticking to the metal wiring is entirely removed. As the second remover liquid, a liquid containing hydroxylamine is used as an example.
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