| 摘要 |
<p>PROBLEM TO BE SOLVED: To impart a memory characteristic to an optical switch and to occasionally change its memory state. SOLUTION: At least one ferroelectric thin films 2 are formed on a substrate 1 having an electro-optic effect and the spontaneous polarization electric field of the ferroelectric thin films 2 acts on the substrate 1 to change the refractive index of the substrate 1 by the electro-optic effect. The spontaneous polarization electric field of the ferroelectric thin films 2 acts on the adjacent substrate and the refractive index of the substrate is changed by the electro-optic effect. Since the spontaneous polarization of the ferroelectric thin films 2 remains, the refractive index change persists and the optical switch having the memory characteristic may be obtained.</p> |
