SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND FABRICATION METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To reduce leakage current of a capacitive element comprising an MISFET(metal insulator semiconductor field effect transistor). SOLUTION: A capacitive element C1 is formed utilizing the storage area of a p-channel MISFET having a gate oxide film 9B thicker than an MISFET at a logic section. A polysilicon film constituting a part of a gate electrode 10E is doped with n-type impurities so that the capacitive element C1 can operate stably even with a low power supply voltage.