发明名称 |
METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES |
摘要 |
A method of forming a semiconductor structure including providing a single crystal semiconductor substrate of GaP, and fabricating a graded composition buffer including a plurality of epitaxial semiconductor Inx(AlyGa1-y)1-xP alloy layers. The buffer includes a first alloy layer immediately contacting the substrate having a lattice constant that is nearly identical to that of the substrate, subsequent alloy layers having lattice constants that differ from adjacent layers by less than 1 %, and a final alloy layer having a lattice constant that is substantially different from the substrate. The growth temperature of the final alloy layer is at least 20 DEG C less than the growth temperature of the first alloy layer.
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申请公布号 |
WO0033388(A9) |
申请公布日期 |
2001.03.29 |
申请号 |
WO1999US28044 |
申请日期 |
1999.11.24 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
KIM, ANDREW, Y.;FITZGERALD, EUGENE, A. |
分类号 |
C30B23/00;C30B25/00;C30B25/02;C30B25/06;C30B28/12;C30B28/14;C30B29/40;H01L21/20;H01L21/205;H01L31/18;H01L33/00;H01L33/30;(IPC1-7):H01L33/00;H01S5/323 |
主分类号 |
C30B23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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