Semiconductor laser device and method of manufacturing the same

摘要

A semiconductor laser device is characterized in that an angle &thetas; of inclination formed by the side surfaces of a ridge portion and a lower part of the ridge portion is at least 70 DEG and not more than 117 DEG , a p-type cladding layer is made of AlX1Ga1-X1As, a first current blocking layer is made of AlX2Ga1-X2As, the distance between an emission layer and the first current blocking layer satisfies the relation of t </= 0.275/(1 - (X2 - X1)) assuming that t represents the distance, and a lower width W of the ridge portion is at least 2 mu m and not more than 5 mu m. <IMAGE>