| 摘要 |
Structures and methods that provide for via transitions between opposite sides of a high resistivity silicon micro-machined membrane substrate. The via transitions provide ground-signal-ground interconnection between coplanar waveguides disposed on opposite sides of substrate. Adjacent via transitions are anisotropically etched from opposite surfaces of the substrate to form the via transitions. The ground-signal-ground configuration provides RF impedance matching at the via transition.
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