| 摘要 |
PROBLEM TO BE SOLVED: To simplify the costitution at the time of surface treating operation by introducing ozone into an airtight space formed at the inside of a treating system in a state same is assembled and passivating the inner surface of the airtight space. SOLUTION: After the completion of the assembly of a semiconductor fabrication system 1, the pressure in an airtight space is reduced, and, after that, high concentration ozone is introduced from a gas introducing tube 3. Ozone reaches a regulator 4, a valve 5, a mass flow controller 6 and a filter 7 together with a reaction chamber 8. At this time, the parts of joints 12b and 12c have been sealed by plugs or the like. Moreover, exhaust piping 9 in the reaction chamber 8 is sealed by a valve 11, ozone is charged thereto till the pressure reaches the atmospheric one, is sealed therein for a fixed time and is thereafter exhausted. Successively, such pressure reduction and charging operations are repeated, e.g. for three times. In this way, an oxidized film is deposited over the whole face of the inner surface of the system including details or the like of purchased parts in the gross, and by the oxidized film, the corrosion of the piping or the like caused by corrosive gas and plasma is prevented.
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