| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film deposition method and a system therefor capable of depositing a film of a high grade while, by respectively controlling the dissociation of each gas in the case a film is deposited by using gas for film deposition and a radical gaseous starting material different in dissociation energy, the generation of a large amount of ions by the excessive dissociation of each gas and the damage of the film caused by a high plasma potential are suppressed and moreover capable of uniformly depositing the film of good quality on a large area. SOLUTION: As for this thin film deposition method, a film deposition chamber 1 provided with a substrate holder 12 and a radical applying device 2 provided connectedly to the film deposition chamber 1 and uniformly applying neutral radicals on the whole of the region as the object for film deposition in the substrate S to be film-deposited set to the substrate holder 12 are used, prescribed gas for film deposition is introduced into the film deposition chamber 1 to generate gas plasma PL1 for film deposition in the viciniity of the substrate S to be film-deposited set to the substrate holder 12, in the radical applying device 2, a prescribed radical gaseous starting material is excited and dissociated to produce neutral radicals RA, and furthermore, the radicals RA are uniformly applyed on the region as the object for film deposition in the substrate S to be film-deposited to deposit a prescribed thin film on the substrate S to be film-deposited. Moreover, the thin film deposition system executes same.
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