| 发明名称 |
High dielectric constant material deposition to achieve high capacitance |
| 摘要 |
A method for forming a dielectric layer includes exposing a surface to a first dielectric material in gaseous form at a first temperature. Nuclei of the first dielectric material are formed on the surface. A layer of a second dielectric material is deposited on the surface by employing the nuclei as seeds for layer growth wherein the depositing is performed at a second temperature which is greater than the first temperature.
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| 申请公布号 |
US6207584(B1) |
申请公布日期 |
2001.03.27 |
| 申请号 |
US20000478270 |
申请日期 |
2000.01.05 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORP.;INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
SHEN HUA;KOTECKI DAVID E.;LAIBOWITZ ROBERT;SAENGER KATHERINE LYNN;ATHAVALE SATISH D.;LIAN JENNY;GUTSCHE MARTIN;WANG YUN-YU;SHAW THOMAS |
| 分类号 |
H01L21/02;H01L21/314;H01L21/316;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/02 |
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