发明名称 |
Synchronous semiconductor memory device |
摘要 |
The synchronous semiconductor memory device related to the present invention is a synchronous semiconductor memory device in which for one data read signal, the respective data corresponding to a plurality of addresses are sequentially read out from a memory cell in synchronism with an external clock signal, and which comprises a control circuit which executes control according to an externally inputted control signal so as to output only the data corresponding to one address from the memory cell for one data read signal.
|
申请公布号 |
US6208576(B1) |
申请公布日期 |
2001.03.27 |
申请号 |
US19990231870 |
申请日期 |
1999.01.14 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TSUDA NOBUHIRO |
分类号 |
G11C11/413;G11C7/00;G11C7/10;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/413 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|