| 发明名称 |
Compounds and methods for depositing pure thin films of gallium nitride semiconductor |
| 摘要 |
The invention is directed to novel compounds which serve as single-source precursors for the deposition of gallium nitride on thin films. The invention is also directed to methods for the synthesis of these novel compounds. The invention is further directed to methods for the use of such compounds in the deposition of gallium nitride on thin films and in the synthesis of bulk materials.
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| 申请公布号 |
US6207844(B1) |
申请公布日期 |
2001.03.27 |
| 申请号 |
US19990310490 |
申请日期 |
1999.05.12 |
| 申请人 |
ARIZONA BOARD OF REGENTS |
发明人 |
KOUVETAKIS JOHN;MCMURRAN JEFF |
| 分类号 |
C01B21/087;C01B21/088;C01B21/092;C07F5/00;C23C16/30;C30B25/02;(IPC1-7):C07F5/00;C01B21/06 |
主分类号 |
C01B21/087 |
| 代理机构 |
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| 主权项 |
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