| 摘要 |
PROBLEM TO BE SOLVED: To form CoSi2 films on source/drain diffused layers without causing a deterioration of the electrical characteristics of a semiconductor device even though a miniaturization of an element is progressed. SOLUTION: Arsenic ions are implanted in a silicon substrate 11 in a state that a substrate temperature is kept at a low temperature of 100 deg.C or lower and thereafter, a heat treatment is performed to form source/drain diffused layers 16 in the substrate 11. Then after cobalt films 19 are respectively deposited on the layers 16, a heat treatment is performed to form CoSi2 films 23 on the layers 16. At this time, this heat treatment is performed by two times. The first heat treatment is performed at a temperature of 400 deg.C or higher to 500 deg.C or lower to form CoSi films 22 and the following heat treatment is performed at a temperature of 800 deg.C or higher to 900 deg.C or lower to change the films 22 into the films 23.
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