发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which can eliminate a dimensional conversion difference and can simplify a manufacturing process by omitting an etching step. SOLUTION: The method for manufacturing a semiconductor device includes steps of forming a resist film 3 on an opening formation region for contact hole or the like, forming an insulating film 4 in a region other than the resist film 3, and removing the resist film 3 to form an opening such as a contact hole 8a in the insulating film 4.
申请公布号 JP2001077194(A) 申请公布日期 2001.03.23
申请号 JP19990252434 申请日期 1999.09.07
申请人 SANYO ELECTRIC CO LTD 发明人 YAMASHITA TOMIO;FUJITA KAZUNORI
分类号 H01L21/768;H01L21/28;(IPC1-7):H01L21/768 主分类号 H01L21/768
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