发明名称 |
PLASMA PROCESSING DEVICE AND METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing device which is capable of shortening a processing time and moreover contaminating a work less when all the surface of a substrate such as a BGA(Ball Grid Array) substrate is treated. SOLUTION: This device is equipped with a reaction chamber 1 of insulating material and at least a pair of electrodes 2 and 3 which are brought into contact with the outer surface of the reaction chamber 1 confront each other, where plasma generating gas is fed into the reaction chamber 1. An alternating electric field is applied between the electrodes 2 and 3 to generate a glow discharge in the reaction chamber 1 under an atmospheric pressure. In this case, the electrodes 2 and 3 are arranged so as to form an electric line of force along the inner surface of the reaction chamber 1. A blowout opening 4 which blows out a jet of plasma of prescribed width is provided to the reaction chamber 1. |
申请公布号 |
JP2001077097(A) |
申请公布日期 |
2001.03.23 |
申请号 |
JP19990303117 |
申请日期 |
1999.10.25 |
申请人 |
MATSUSHITA ELECTRIC WORKS LTD;OKAZAKI SACHIKO;KOKOMA MASUHIRO |
发明人 |
TAGUCHI NORIYUKI;SAWADA KOJI;YAMAZAKI KEIICHI;KITAYAMA KAZUYA;INOUE YOSHIMI;OKAZAKI SACHIKO;KOKOMA MASUHIRO |
分类号 |
H01L21/302;C23C16/513;C23F4/00;H01L21/205;H01L21/3065;H05H1/24;H05H1/46 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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