| 摘要 |
PROBLEM TO BE SOLVED: To sufficiently reduce the parasitic capacitance and parasitic resistance by forming a passive element on an insulation region buried with an insulator in its groove having a depth which is greater than a specific value on the element forming side of a semiconductor substrate for obtaining sufficient strength. SOLUTION: On a silicon substrate 11, a region having a groove 12 filled with a low-permittivity insulation film 13 is provided. On this insulation region, a spiral inductance 14 of a passive element is formed. Because strong electromagnetic waves will occur directly under the spiral inductance 14, an active element 15 (which consists of an active element such as a MOS transistor, the wiring in a first layer, etc.), is provided in a region separated from the region having the low-permittivity insulation film 13. It is desirable that the groove 12 has a depth (the thickness of the insulation film 13 in the groove 12) of 20 μm or greater. Although the material of the low-permittivity insulation film is not specifically determined, an organic insulation film having a permittivity of approximately 2.6 is generally used. |
