| 摘要 |
PROBLEM TO BE SOLVED: To provide a hetero junction bipolar transistor integrated circuit, where the heat generated at a load resistor is diffused efficiently to a substrate side, moreover a contact through hole to an emitter electrode is not deep, and to provide a method for manufacturing it at a high yield. SOLUTION: On a semi-insulating InP substrate 5, a hetero junction bipolar transistor comprising an emitter electrode 1, a base electrode 2, and a collector electrode 3 is integrated, while a load resistor 9 is integrated on an SiO2 film 8 formed on the substrate 5. The surface of substrate 5, before the SiO2 film 8 is formed, is subjected to electron cyclotron resonance reactive etching in a mixed gas of chlorine and argon, then wet-etched in a chlorine etching liquid for improved adhesion between the surface and the SiO2 firm 8. An InAlAs buffer layer of high resistance is used as an intermediate layer between the substrate and the SiO2 film.
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