| 摘要 |
PROBLEM TO BE SOLVED: To reduce the aspect ratio of a semiconductor laser in a low threshold current by a method where a striped aperture is formed, in such a way as to make a substrate, an n-type layer and a current constricting layer consisting of a high-meting point metal layer penetrate and a quantum well active layer is formed on the striped aperture. SOLUTION: An AlN buffer layer 2 and an n-type GaN layer 3 are grown on a sapphire substrate 1 in a first crystal growth by an organometallic vapor growth method, and thereafter a current-constricting layer 4 consisting of a tungsten layer is deposited on the layer 3. After that, A striped aperture 5 is formed in such a way as to make the layer 4 penetrate. Then a first clad layer 6, a first light guide layer 7, a multi-quantum well active layer 8, a cap layer 9, a second light guide layer 10, a second clad layer 11 and a contact layer 12 are grown in the order in a second crystal growth. Lastly, a p-type electrode 13 is formed on the striped aperture 5, and an n-type electrode 14 is formed on the surface of the layer 3 etched, until one part of the layer 3 is exposed.
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