| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that can reduce the damage to a substrate and excessive etching of the substrate by setting the frequency that the bottom of a contact is exposed to an etching atmosphere to once. SOLUTION: A first insulating film 102 consisting of a silicon nitride film is provided on a semiconductor substrate 101 on which an element isolation region and a semiconductor element are already formed. A second insulating film 103 as an interlayer film, a conductive layer 104, and a third oxide film 105 as the interlayer film are sequentially formed on this first insulating film 102. A contact hole 106 is formed so as to penetrate into the third insulating film 105, the conductive layer 104, the second insulating film 103, and the first insulating film 102, and so as to contact the semiconductor substrate 101. An oxide film 107 is formed by oxidizing the part exposed to the inner surface of the contact hole 106 of the conductive layer 104. Further, the first insulating film 102 facing the contact hole 106 is removed by etching. |
