| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor photo-device in which the sensitivity can be upgraded. SOLUTION: A base body 2 comprises a substrate 11 of p-type single- crystalline silicon wafer and an epitaxial layer 12 of n-type single-crystalline silicon formed on a surface of the substrate 11. An isolation layer 4 is composed of p-type single-crystalline silicon, and is formed in a specified position of the epitaxial layer 12 piercing from the surface of the layer 12 to the substrate 11. A part of the epitaxial layer 12 surrounded by the isolation layer 4 constitutes a light receiving part 3. An embedded layer 5 is embedded by exposing itself on the surface of the light receiving part 3. The embedded layer 5 has a hole part 5a and a plurality of groove parts 5b. Each groove 5b is formed in a slit shape constituting a longitudinal hole. For this reason, each groove 5b forms a window 14 of an approximately rod shape, which is composed of the light receiving part 3.
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