| 摘要 |
A protection circuit (10) for a semiconductor-on-insulator device (20) allows an electrostatic event to occur at an input/output pad (12) without adversely affecting sensitive circuits, such as MOSFETs used in digital circuits. The protection circuit (10) allows the input/output pad (12) to be biased positively and negatively with respect to two different supply potentials and to other input/output pads on the chip. A body-tied MOSFET (14) is used in the protection circuit (10) where its drain regions (38) lie outside MOSFET's closed loop gate electrode (34). |
