| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
<p>A semiconductor device protected from power breakdown. The semiconductor device includes a base electrode connected to a base region in a base contact region defined on the surface of the base region. An n-type region of the same conduction type as an emitter region surrounds the base contact region under the border of the base contact region. Specifically, the p-type base region and the n-type region form a p-n diode under the border of the base contact region.</p> |
| 申请公布号 |
WO0120683(A1) |
申请公布日期 |
2001.03.22 |
| 申请号 |
WO2000JP06035 |
申请日期 |
2000.09.06 |
| 申请人 |
ROHM CO., LTD.;SAKAMOTO, KAZUHISA |
发明人 |
SAKAMOTO, KAZUHISA |
| 分类号 |
H01L21/331;H01L29/08;H01L29/10;H01L29/417;H01L29/47;H01L29/73;H01L29/732;H01L29/74;H01L29/872;(IPC1-7):H01L29/73;H01L29/861 |
主分类号 |
H01L21/331 |
| 代理机构 |
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代理人 |
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| 主权项 |
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