| 摘要 |
PURPOSE: A semiconductor device is provided to be capable of obtaining excellent voltage-current characteristics. CONSTITUTION: A semiconductor device is provided with an N type GaAs substrate(1), an N type ZnMgSSe clad layer(2) formed on the N type GaAs substrate, an active layer(3) formed on the resultant structure, a P type ZnMgSSe clad layer(4) formed on the active layer, and a P type ZnSe contact layer(5) formed on the P type ZnMgSSe clad layer. The semiconductor device further includes a P type ZnTe contact layer(6) formed on the resultant structure, the first N type electrode(7) formed on the predetermined portion of the P type ZnTe contact layer, the second N type electrode(8) formed on the backside of the N type GaAs substrate, and a P type ZnSe/ZnTe multi-quantum well layer(9) between the P type ZnTe contact layer and the P type ZnSe contact layer.
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