| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, which can uniformly and completely remove variations in the thickness of a silicon oxide film, after the silicon oxide film is deposited on an entire semiconductor substrate and then the silicon oxide film other than that embedded within grooves for STI (fine trench isolation) is removed by chemical and mechanical polishing(CMP). SOLUTION: A silicon oxide 400 is embedded in grooves 300 for STI (fine trench isolation) by a high-density plasma DVD process, the silicon oxide film 400 is also formed on a silicon nitride film 200 as a stopper film for CMP (chemical and mechanical polishing), a resist film 500 is coated on the entire semiconductor substrate and subjected to dry etching process, so that the selectivity of the film 400 to the film 500 is controlled to be 1.0 or higher, and that the thickness of a silicon oxide film 400a in a projected region of a relatively broad pattern is nearly equal to the thickness of a silicon oxide film 400b in the projected region of a relatively narrow pattern.
|
