发明名称 HALFTONE PHASE SHIFT PHOTOMASK AND BLANKS FOR HALFTONE PHASE SHIFT PHOTOMASK FOR PRODUCING IT
摘要 <p>A halftone phase shift photomask having its transmittance, at wavelengths used on an inspection/measuring device, accurately controlled so as to easily ensure a photomask quality even when it is accurately controlled at a phase difference of 180° and exposure wavelengths with a transmittance set to a desirable one of 1 to 20%, the halftone phase shift photomask (107) comprising a halftone phase shift film formed on a transparent substrate (101) and containing at least tantalum, oxygen, carbon and nitrogen, wherein the photomask has a structure in which different films are laminated in at least two layers (102, 103).</p>
申请公布号 WO2001020400(P1) 申请公布日期 2001.03.22
申请号 JP2000006038 申请日期 2000.09.06
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