| 摘要 |
PURPOSE: A process chamber of a low pressure chemical vapor deposition device is provided to have two ground lines of high frequency side, fill up insufficient capacitance of a ground line, prevent overload of a low frequency side ground line, and prevent a ground line from breaking. CONSTITUTION: A process chamber of low pressure chemical vapor deposition chamber diffuses a gas and chemical on a wafer of high temperature heater block through a shower head(106) in a vacuum state, makes a plasma state by RF generator(107), and forms a film. A ground line(18) is additionally mounted to a high frequency side in the process chamber. Thereby, the process chamber fills up insufficient capacitance of the ground line(18), prevents overload of a low frequency side ground line, and prevents a ground line from breaking.
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